Si-H clusters, defects, and hydrogenated silicon
نویسندگان
چکیده
منابع مشابه
Excitons in small hydrogenated Si clusters
The excitonic states of four small hydrogenated Si clusters (SiH4 ,Si2H6 ,Si5H12 , and Si10H16! are studied using the diffusion quantum Monte Carlo approach. The importance of using accurate guiding wave functions is stressed and we show that the quantum chemical singles-only configuration interaction method and the time-dependent density functional theory within the adiabatic local-density app...
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The thermochemical properties for selected hydrogenated silicon clusters (Si(x)H(y), x = 3-13, y = 0-18) were calculated using quantum chemical calculations and statistical thermodynamics. Standard enthalpy of formation at 298 K and standard entropy and constant pressure heat capacity at various temperatures, i.e., 298-6000 K, were calculated for 162 hydrogenated silicon clusters using G3//B3LY...
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The study of electronic excitations in hydrogen terminated silicon clusters is important for understanding the optical properties of confined systems such as quantum dots and porous silicon. Here we calculate the excitation energies and absorption spectra for SinHm clusters using linear response theory within the time-dependent local density approximation (TDLDA). We find the computed excitatio...
متن کاملLight-induced Defects in Thermal Annealed Hydrogenated Amorphous Silicon
The metastable defects of a-Si:H samples annealed at temperatures in the 300-550°C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable d...
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We report first principles ab initio density functional calculations of hydrogen dynamics in hydrogenated amorphous silicon. Thermal motion of the host Si atoms drives H diffusion, as we demonstrate by direct simulation and explain with simple models. Si-Si bond centers and Si ring centers are local energy minima as expected. We also describe a new mechanism for breaking Si-H bonds to release f...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2001
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.64.125203